プロフィール

市川 修平(Shuhei Ichikawa)


    京都大学大学院 工学研究科 電子工学専攻
    光材料物性工学分野(川上研究室)

    博士後期課程 1年
    日本学術振興会 特別研究員(DC1)

    生年月日: 1989年10月9日
    出身地: 兵庫県

経歴

  • 2008年3月 高槻高等学校 卒業
  • 2012年3月 京都大学 工学部 電気電子工学科 卒業
  • 2014年3月 京都大学大学院 工学研究科 電子工学専攻 修士課程 修了

受賞歴

  • 融合ナノ基盤工学研究部門 第5回成果報告会 優秀発表賞
    市川 修平, 船戸 充, 川上 養一
      "半極性(1102)AlNホモエピタキシャル膜における表面ナノピットの形成と消滅,"
      融合ナノ基盤工学研究部門 第5回成果報告会, 京都大学, 2013年3月.

  • 第33回電子材料シンポジウム EMS賞
    S. Ichikawa, Y. Iwata, M. Funato, and Y. Kawakami
      "Strong Emissions from Semipolar AlGaN/AlN Quantum Wells
      with Fast Radiative Recombination Lifetimes,"
      33rd Electronic Mater. Symp., Fr1-10, Laforet Shuzenji, (July 2014).

  • ナノ構造・エピタキシャル成長分科会 第6回窒化物半導体結晶成長講演会 発表奨励賞
    市川 修平, 岩田 佳也, 船戸 充, 川上 養一
      "半極性面AlGaN/AlN量子井戸の短い輻射再結合寿命と発光強度の増大,"
      ナノ構造・エピタキシャル成長分科会 第6回窒化物半導体結晶成長講演会, Fr-8, 名城大学, 2014年7月.

  • 2014年秋季第75回応用物理学会関係連合講演会 講演奨励賞
    市川 修平, 船戸 充, 岩崎 洋介, 川上 養一
      "CLマッピング測定を用いたAlGaN系半導体における支配的な非輻射再結合経路の直接観察,"
      2014年秋季第75回応用物理学会関係連合講演会, 20p-C5-8, 北海道大学, 2014年9月.

助成等

  1. 特別研究員奨励費(DC1), 2014年4月~2017年3月
      「非極性面上窒化アルミニウムガリウム系半導体結晶の高品質化と物性制御」

  2. 2014年度 京都大学光・電子理工学COE若手研究助成, 2014年9月~2015年2月

発表・論文

-論文リスト

  • S. Ichikawa, K. Kawahara, J. Suda, and T. Kimoto
    "Carrier Recombination in n-Type 4H-SiC Epilayers with Long Carrier Lifetimes,"
    Appl. Phys. Express 5, 101301 (2012).

  • ○T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, T. Okuda, S. Ichikawa, and Y. Nishi
    "Defect Electronics in SiC and Fabrication of Ultrahigh-Voltage Bipolar Devices,"
    ECS Transactions 50, 25 (2012).

  • S. Ichikawa, Y. Iwata, M. Funato, S. Nagata, and Y. Kawakami
    "High quality semipolar (1102) AlGaN/AlN quantum wells with remarkably enhanced optical transition probabilities,"
    Appl. Phys. Lett. 104, 252102 (2014).
-発表リスト

International Conferences
Oral Presentation

  • ○T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, T. Okuda, and S. Ichikawa
    "Challenges to Ultrahigh-Voltage SiC Devices for Future Power Infrastructures",
    5th GCOE Int. Symposium on Photonics and Electronics Science and Engineering, Kyoto, (March 2012).

  • (Invited)○T. Kimoto, K. Kawahara, B. Zippelius, S. Ichikawa, and J. Suda
    "Generation and elimination of the Z1/2 center in 4H-SiC",
    Materials Research Society, H1.1, San Francisco, USA, (April 2012).

  • (Invited)○T. Kimoto, J. Suda, K. Kawahara, H. Niwa, T. Okuda, N. Kaji, and S. Ichikawa
    "Defect Electronics toward Ultrahigh-Voltage SiC Bipolar Devices", 9th Europ. Conf. on SiC and Related Materials, We6-1, St. Petersburg, Russia, (Sep. 2012).

  • (Plenary)○T. Kimoto, J. Suda, G. Feng, H. Miyake, K. Kawahara, H. Niwa, T. Okuda, S. Ichikawa, and Y. Nishi
    "Defect Electronics in SiC and Fabrication of Ultrahigh-Voltage Bipolar Devices",
    222nd Electrochem. Soc. Fall Meeting 2012, II-1, Honolulu, Hawaii, (Oct. 2012).

  • S. Ichikawa, M. Funato, S. Nagata, and Y. Kawakami
    "Optimal Growth Pressure for High Quality Semipolar (1102) AlN Homoepitaxial Films,"
    40th International Symposium of Compound Semiconductors, MoA4-3, Kobe, Japan, (May 2013).

  • S. Ichikawa, M. Funato, S. Nagata, and Y. Kawakami
    "Mechanism of Pit Generation and Elimination of Semipolar (1102) AlN Homoepitaxial Films,"
    10th International Conf. on Nitride Semiconductors, A5.05, Washington, DC, USA, (Aug. 2013).

  • S. Ichikawa, M. Funato, S. Nagata, and Y. Kawakami
    "Homoepitaxy of AlN on Semipolar (1102) Substrates Grown by Physical Vapor Transport Method,"
    2013 JSAP-MRS Joint Symposia, 18a-M6-7, Kyoto, Japan, (Sep. 2013).

  • S. Ichikawa, M. Funato, and Y. Kawakami
    "High quality semipolar AlGaN/AlN quantum wells for deep ultraviolet emitters,"
    Swiss-Kyoto Symposium 2013, Ops5, Zurich, Switzerland, (Nov. 2013).

  • S. Ichikawa, Y. Iwata, M. Funato, and Y. Kawakami
    "Fabrication of High Quality Semipolar AlGaN/AlN Quantum Wells with Remarkably Short Radiative Recombination Lifetimes,"
    International Workshop on Nitride Semiconductors 2014, WeGO22, Wroclaw, Poland, (Aug. 2014).

Domestic Conferences
Oral Presentation

  • S. Ichikawa, J. Suda, and T. Kimoto
    "Dominant Carrier Recombination Process in n-type SiC Epilayers with Long Carrier Lifetime,"
    59th Japan Society of Applied Physics Spring Meeting, 17p-A8-12, Waseda Univ., (Mar. 2012).

  • S. Ichikawa, M. Funato, S. Nagata, and Y. Kawakami
    "Optimal Growth Pressure for High Quality Semipolar AlN (1102) Homoepitaxial Films,"
    60th Japan Society of Applied Physics Spring Meeting, 29a-G21-6, Kanagawa Institute Tecchology, (Mar. 2013).

  • S. Ichikawa, M. Funato, S. Nagata, and Y. Kawakami
    "Fabrication of Semipolar (1102) AlGaN/AlN Quantum Wells on AlN Substrates,"
    74th Japan Society of Applied Physics Fall Meeting, 19p-B5-10, Doshisha Univ., (Sep. 2013).

  • S. Ichikawa, Y. Iwata, M. Funato, and Y. Kawakami
    "Remarkably Short Radiative Recombination Lifetime of High Quality Semipolar AlGaN/AlN Quantum Wells due to Suppression of Internal Electric Field,"
    61th Japan Society of Applied Physics Spring Meeting, 19a-E13-4, Aoyama Gakuin Univ., (Mar. 2014).

  • S. Ichikawa, R. Ishii, M. Funato, and Y. Kawakami
    "In-plane Polarization Control of Semipolar AlGaN/AlN Quantum Wells,"
    61th Japan Society of Applied Physics Spring Meeting, 19a-E13-5, Aoyama Gakuin Univ., (Mar. 2014).

  • (Young Scientist Presentation Award)S. Ichikawa, M. Funato, Y. Iwasaki, and Y. Kawakami
    "Direct Observation of Dominant Nonradiative Recombination Path in AlGaN-related Structures using Cathodoluminescence Mapping,"
    75th Japan Society of Applied Physics Fall Meeting, 18a-C5-12, Hokkaido Univ., (Sep. 2014).

  • ○Y. Iwata, S. ichikawa, M. Funato, and Y. Kawakami
    "Well-defined LO Phonon Replicas for Homo-epitaxial AlGaN/AlN Quantum Wells Observed by Microscopic PL Measurements,"
    75th Japan Society of Applied Physics Fall Meeting, 20p-C5-8, Hokkaido Univ., (Sep. 2014).

  • (Invited)S. Ichikawa, Y. Iwata, M. Funato, and Y. Kawakami
    "Optimization of Growth Conditions for Semipolar AlGaN/AlN Quantum Wells and Their Strong Emissions,"
    44th National Conference on Crystal Growth, 06pB07, Gakushuin Univ., (Nov. 2014).

  • (Invited)S. Ichikawa, M. Funato, Y. Iwasaki, and Y. Kawakami(to be planned)
    "Variation of Dominant Nonradiative Recombination Paths in AlGaN-related Structures due to Temperature,"
    62th Japan Society of Applied Physics Spring Meeting, unfixed, Tokai Univ., (Mar. 2015).

  • S. Ichikawa, Y. Iwata, M. Funato, and Y. Kawakami(to be planned)
    "Investigation of Critical Thickness for AlGaN/AlN Heterostructures using Time-resolved Photoluminescence Spectroscopy,"
    62th Japan Society of Applied Physics Spring Meeting, unfixed, Tokai Univ., (Mar. 2015).

Poster with Short Presentation

  • (Excellent Paper Award)S. Ichikawa, M. Funato, and Y. Kawakami
    "Generation and Elimination of Surface Nanopits on Semipolar (1102) AlN Homoepitaxial Films,"
    5th Integrated Nanotechnology Foundation Research Project Research Report Meeting, 10, Kyoto Univ., (Mar. 2013).

  • S. Ichikawa, M. Funato, S. Nagata, and Y. Kawakami
    "Remarkable Surface Morphology Improvement of Semipolar (1102) AlN Homoepitaxial Films by Nucleation Control Growth,"
    32nd Electronic Mater. Symp., Th3-6, Laforet Biwako, (July 2013).

  • (EMS Award)S. Ichikawa, Y. Iwata, M. Funato, and Y. Kawakami
    "Strong Emissions from Semipolar AlGaN/AlN Quantum Wells with Fast Radiative Recombination Lifetimes,"
    33rd Electronic Mater. Symp., Fr1-10, Laforet Shuzenji, (July 2014).

  • (Young Scientist Presentation Award)S. Ichikawa, Y. Iwata, M. Funato, and Y. Kawakami
    "Strong Emissions and Short Radiative Recombination Lifetimes of Semipolar AlGaN/AlN Quantum Wells,"
    6th Growth of III-Nitrides Meeting, Fr-8, Meijo Univ., (July 2014).

連絡先

 京都大学大学院 工学研究科 電子工学専攻 川上研究室
 〒615-8510 京都府京都市西京区 京都大学桂 A1-319
 TEL: 075-383-2314 FAX: 075-383-2312
 e-mail : shuhei.ichikawa@optomater.kuee.
 (後ろにkyoto-u.ac.jpを追加してください)